IGBT Modules PM-IGBT-TFS-SP3
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Configuration | Single |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tube |
| Pd - Power Dissipation | 750 W |
| Maximum Operating Temperature | + 100 C |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current at 25 C | 290 A |