IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
| Maximum Operating Temperature | + 100 C |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 208 W |
| Minimum Operating Temperature | - 40 C |
| Configuration | 3-Phase |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Continuous Collector Current at 25 C | 55 A |
| Product | IGBT Silicon Modules |