IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
| Maximum Operating Temperature | + 100 C |
| Continuous Collector Current at 25 C | 500 A |
| Gate-Emitter Leakage Current | 1.2 uA |
| Pd - Power Dissipation | 1.15 kW |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Packaging | Tube |
| Minimum Operating Temperature | - 40 C |