IGBT Modules PM-IGBT-TFS-D4
Products specifications
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Gate-Emitter Leakage Current | 600 nA |
| Pd - Power Dissipation | 1.785 kW |
| Continuous Collector Current at 25 C | 650 A |
| Packaging | Bulk |
| Maximum Operating Temperature | + 125 C |