IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
| Continuous Collector Current at 25 C | 550 A |
| Collector-Emitter Saturation Voltage | 1.4 V |
| Configuration | Single |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 600 nA |
| Pd - Power Dissipation | 1.75 kW |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Operating Temperature | + 100 C |