IGBT Modules PM-IGBT-TFS-D4
Products specifications
| Collector-Emitter Saturation Voltage | 1.5 V |
| Minimum Operating Temperature | - 40 C |
| Configuration | Single |
| Packaging | Bulk |
| Pd - Power Dissipation | 2.3 kW |
| Product | IGBT Silicon Modules |
| Gate-Emitter Leakage Current | 3.1 uA |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 1 kA |