IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
| Gate-Emitter Leakage Current | 240 nA |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tube |
| Pd - Power Dissipation | 250 W |
| Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product | IGBT Silicon Modules |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 100 A |
| Technology | - |
| Collector-Emitter Saturation Voltage | 1.65 V |