RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 750 W 40 MHz T1
Lead Time: 168 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Output Power | 750 W |
| Maximum Operating Temperature | + 175 C |
| Gain | 17 dB |
| Technology | Si |
| Id - Continuous Drain Current | 30 A |
| Minimum Operating Temperature | - 55 C |
| Product Type | RF MOSFET Transistors |
| Transistor Polarity | N-Channel |