RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
Products specifications
|
Vds - Drain-Source Breakdown Voltage
|
1 kV |
|
Technology
|
Si |
|
Product Type
|
RF MOSFET Transistors |
|
Rds On - Drain-Source Resistance
|
1 Ohms |
|
Gain
|
16 dB |
|
Mounting Style
|
Through Hole |
|
Output Power
|
300 W |
|
Maximum Operating Temperature
|
+ 150 C |
|
Packaging
|
Tube |
|
Minimum Operating Temperature
|
- 55 C |
|
Id - Continuous Drain Current
|
13 A |
|
Transistor Polarity
|
N-Channel |