RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
Products specifications
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Technology | Si |
| Product Type | RF MOSFET Transistors |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Gain | 16 dB |
| Mounting Style | Through Hole |
| Output Power | 300 W |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 13 A |
| Transistor Polarity | N-Channel |