RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
Lead Time: 168 Days
Products specifications
| Output Power | 900 W |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Gain | 15 dB |
| Maximum Operating Temperature | + 175 C |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 10 A |
| Product Type | RF MOSFET Transistors |