IGBT Modules PM-IGBT-TFS-SP3
Products specifications
| Gate-Emitter Leakage Current | 150 nA |
| Maximum Operating Temperature | + 100 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 650 W |
| Packaging | Tube |
| Minimum Operating Temperature | - 40 C |
| Continuous Collector Current at 25 C | 185 A |
| Configuration | Dual |