IGBT Modules PM-IGBT-TFS-SBD-SP3F
Products specifications
| Packaging | Tube |
| Continuous Collector Current at 25 C | 150 A, 100 A |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 2.05 V, 1.5 V |
| Collector- Emitter Voltage VCEO Max | 1.2 kV, 600 V |
| Pd - Power Dissipation | 500 W, 250 W |
| Gate-Emitter Leakage Current | 240 nA, 600 nA |
| Configuration | Dual Common Emitter |
| Maximum Operating Temperature | + 100 C |