Bipolar Transistors - BJT 50V 800mA 650mW 3 Pin CER RH Small-Signal BJT
Products specifications
| Technology | Si |
| Emitter- Base Voltage VEBO | 6 V |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 1 V |
| Transistor Polarity | NPN |
| Collector- Base Voltage VCBO | 75 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Maximum Operating Temperature | + 200 C |
| Minimum Operating Temperature | - 65 C |