Jantx2N3762

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Bipolar Transistors - BJT PNP Switching Silicon Transistor

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Bipolar Transistors - BJT PNP Switching Silicon Transistor

Products specifications

Technology	Si
Maximum DC Collector Current	1.5 A
Collector- Emitter Voltage VCEO Max	40 V
Maximum Operating Temperature	+ 200 C
Collector- Base Voltage VCBO	40 V
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	0.9 V
Transistor Polarity	PNP
Mounting Style	Through Hole
Emitter- Base Voltage VEBO	5 V
Configuration	Single

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Products specifications

Technology	Si
Maximum DC Collector Current	1.5 A
Collector- Emitter Voltage VCEO Max	40 V
Maximum Operating Temperature	+ 200 C
Collector- Base Voltage VCBO	40 V
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	0.9 V
Transistor Polarity	PNP
Mounting Style	Through Hole
Emitter- Base Voltage VEBO	5 V
Configuration	Single