GS-010-120-1-T

R 1.00

RF MOSFET Transistors 100V, 120A, E-Mode GaN, Top-side Cooled

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RF MOSFET Transistors 100V, 120A, E-Mode GaN, Top-side Cooled

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Technology	GaN
Id - Continuous Drain Current	120 A
Packaging	Reel
Rds On - Drain-Source Resistance	5 mOhms

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Technology	GaN
Id - Continuous Drain Current	120 A
Packaging	Reel
Rds On - Drain-Source Resistance	5 mOhms