IGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so
Products specifications
| Collector-Emitter Saturation Voltage | 1.95 V |
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 250 W |
| Technology | Si |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Continuous Collector Current at 25 C | 35 A |
| Gate-Emitter Leakage Current | 500 nA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Sixpack |