RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
Lead Time: 0 Days
Products specifications
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Gain | 13 dB |
| Output Power | 6 W |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 5 A |
| Product Type | RF MOSFET Transistors |