PD84010-E

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RF MOSFET Transistors RF power tran LdmoST N-chann

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RF MOSFET Transistors RF power tran LdmoST N-chann

Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Output Power	10 W
Id - Continuous Drain Current	8 A
Gain	14.3 dB
Technology	Si
Packaging	Tube
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Output Power	10 W
Id - Continuous Drain Current	8 A
Gain	14.3 dB
Technology	Si
Packaging	Tube
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C