PD85035STR1-E

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RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic

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RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic

Products specifications

Product Type	RF MOSFET Transistors
Technology	Si
Gain	14.9 dB
Output Power	35 W
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	8 A
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Packaging	Reel

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Products specifications

Product Type	RF MOSFET Transistors
Technology	Si
Gain	14.9 dB
Output Power	35 W
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	8 A
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Packaging	Reel