RF MOSFET Transistors RF Trans 200V 300W 24 dB at 30 MHz
Products specifications
| Technology | Si |
| Gain | 24 dB |
| Transistor Polarity | N-Channel |
| Output Power | 300 W |
| Product Type | RF MOSFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 40 A |
| Packaging | Bulk |
| Maximum Operating Temperature | + 150 C |