RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz
Lead Time: 196 Days
Products specifications
|
Id - Continuous Drain Current
|
9 A |
|
Maximum Operating Temperature
|
+ 200 C |
|
Transistor Polarity
|
N-Channel |
|
Vds - Drain-Source Breakdown Voltage
|
90 V |
|
Technology
|
Si |
|
Product Type
|
RF MOSFET Transistors |