RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz
Products specifications
| Id - Continuous Drain Current | 9 A |
| Maximum Operating Temperature | + 200 C |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 90 V |
| Technology | Si |
| Product Type | RF MOSFET Transistors |