RF MOSFET Transistors LDMOS avionics radar transistor
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Output Power | 350 W |
| Id - Continuous Drain Current | 2 uA |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Maximum Operating Temperature | + 200 C |
| Product Type | RF MOSFET Transistors |
| Gain | 15 dB |
| Mounting Style | Screw Mount |
| Packaging | Tube |