RF MOSFET Transistors LDMOS avionics radar transistor
Lead Time: 0 Days
Products specifications
|
Vds - Drain-Source Breakdown Voltage
|
80 V |
|
Output Power
|
350 W |
|
Id - Continuous Drain Current
|
2 uA |
|
Transistor Polarity
|
N-Channel |
|
Technology
|
Si |
|
Maximum Operating Temperature
|
+ 200 C |
|
Product Type
|
RF MOSFET Transistors |
|
Gain
|
15 dB |
|
Mounting Style
|
Screw Mount |
|
Packaging
|
Tube |