RF MOSFET Transistors 300W 50V RF MOS 20dB 175MHz N-Ch
Products specifications
| Transistor Polarity | N-Channel |
| Packaging | Bulk |
| Gain | 20 dB |
| Minimum Operating Temperature | - 65 C |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Technology | Si |
| Product Type | RF MOSFET Transistors |
| Output Power | 300 W |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 40 A |