RF MOSFET Transistors 350W 29dB 30MHz STAC N-Ch RF FET
Products specifications
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Minimum Operating Temperature | - 65 C |
| Output Power | 350 W |
| Gain | 29 dB |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Id - Continuous Drain Current | 20 A |