RF MOSFET Transistors RF PWR Trans N-Ch 50V 100MHz FET
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Packaging | Bulk |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Gain | 24 dB |
| Product Type | RF MOSFET Transistors |
| Id - Continuous Drain Current | 40 A |
| Output Power | 300 W |