MOSFETs N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
Lead Time: 252 Days
Products specifications
|
Tradename
|
MDmesh |
|
Pd - Power Dissipation
|
25 W |
|
Vgs th - Gate-Source Threshold Voltage
|
3 V |
|
Vgs - Gate-Source Voltage
|
25 V |
|
Technology
|
Si |
|
Configuration
|
Single |
|
Id - Continuous Drain Current
|
11 A |
|
Maximum Operating Temperature
|
+ 150 C |
|
Channel Mode
|
Enhancement |
|
Mounting Style
|
Through Hole |
|
Minimum Operating Temperature
|
- 55 C |
|
Number of Channels
|
1 Channel |
|
Transistor Polarity
|
N-Channel |
|
Qg - Gate Charge
|
19 nC |
|
Vds - Drain-Source Breakdown Voltage
|
600 V |
|
Rds On - Drain-Source Resistance
|
310 mOhms |