MOSFETs N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
Lead Time: 112 Days
Products specifications
| Tradename | MDmesh |
| Pd - Power Dissipation | 25 W |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Vgs - Gate-Source Voltage | 25 V |
| Technology | Si |
| Configuration | Single |
| Id - Continuous Drain Current | 11 A |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 19 nC |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Rds On - Drain-Source Resistance | 310 mOhms |