IGBT Modules PTD IGBT & IPM
Lead Time: 0 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current at 25 C | 30 A |
| Gate-Emitter Leakage Current | - |
| Pd - Power Dissipation | 52 W |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tray |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Product | IGBT Silicon Modules |
| Configuration | 3-Phase Inverter |