IGBT Transistors 600V 40A High Speed Trench Gate IGBT
Products specifications
| Continuous Collector Current at 25 C | 80 A |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Pd - Power Dissipation | 283 W |
| Configuration | Single |
| Technology | Si |
| Maximum Gate Emitter Voltage | 20 V |
| Packaging | Tube |
| Maximum Operating Temperature | + 175 C |
| Series | STGWT40V60DLF |
| Mounting Style | Through Hole |
| Collector-Emitter Saturation Voltage | 2.35 V |