MOSFET N-Ch 100V 4.1 160A STripFET DeepGATE
Products specifications
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Vgs - Gate-Source Voltage | 4 V |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Qg - Gate Charge | 192 nC |
| Rds On - Drain-Source Resistance | 5.5 mOhms |
| Configuration | Single |
| Id - Continuous Drain Current | 120 A |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 315 W |