MOSFET N-CH 600V 0.25Ohm 13A FDMesh II
Products specifications
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 34 nC |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 290 mOhms |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
| Pd - Power Dissipation | 130 W |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 13 A |