STP20N65M5

MOSFETs N-Ch 650V 0.168 Ohm 18A Mdmesh V
Lead Time: 98 Days

SKU: STP20N65M5

Availability: 969 in stock

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MOSFETs N-Ch 650V 0.168 Ohm 18A Mdmesh V
Lead Time: 98 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Vds - Drain-Source Breakdown Voltage	600 V, 30 V, 900 V, 650 V
Id - Continuous Drain Current	22 A, 120 A, 20 A, 18 A
Series	M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Rds On - Drain-Source Resistance	2.15 mOhms, 210 mOhms, 190 mOhms
Vgs - Gate-Source Voltage	20 V, 30 V, 25 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V, 4 V
Qg - Gate Charge	53 nC, 40 nC, 36 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C, + 150 C
Pd - Power Dissipation	176.5 W, 250 W, 130 W
Channel Mode	Enhancement
Fall Time	108 ns, 16 ns
Rise Time	183 ns, 13.5 ns
Typical Turn-Off Delay Time	90 ns, 64.7 ns
Typical Turn-On Delay Time	18 ns, 20.2 ns
Unit Weight	1.800 g, 2 g
Packaging	Tube
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Mounting Style	Through Hole
Tradename	MDmesh
Configuration	Single

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Vds - Drain-Source Breakdown Voltage	600 V, 30 V, 900 V, 650 V
Id - Continuous Drain Current	22 A, 120 A, 20 A, 18 A
Series	M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Rds On - Drain-Source Resistance	2.15 mOhms, 210 mOhms, 190 mOhms
Vgs - Gate-Source Voltage	20 V, 30 V, 25 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V, 4 V
Qg - Gate Charge	53 nC, 40 nC, 36 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C, + 150 C
Pd - Power Dissipation	176.5 W, 250 W, 130 W
Channel Mode	Enhancement
Fall Time	108 ns, 16 ns
Rise Time	183 ns, 13.5 ns
Typical Turn-Off Delay Time	90 ns, 64.7 ns
Typical Turn-On Delay Time	18 ns, 20.2 ns
Unit Weight	1.800 g, 2 g
Packaging	Tube
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Mounting Style	Through Hole
Tradename	MDmesh
Configuration	Single