STP20NM60FP

MOSFETs N-Ch 600 Volt 20 Amp
Lead Time: 98 Days

SKU: STP20NM60FP

Availability: 314 in stock

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Price

R 195.32

R 108.68

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MOSFETs N-Ch 600 Volt 20 Amp
Lead Time: 98 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Pd - Power Dissipation	192 W, 176.5 W, 250 W, 45 W
Height	9.15 mm
Length	10.4 mm
Series	STP20NM60, M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Fall Time	11 ns, 108 ns, 16 ns
Product Type	MOSFET
Rise Time	20 ns, 183 ns, 13.5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	42 ns, 90 ns, 64.7 ns
Typical Turn-On Delay Time	25 ns, 18 ns, 20.2 ns
Unit Weight	1.438 g, 1.800 g, 2 g
Id - Continuous Drain Current	22 A, 120 A, 20 A
Rds On - Drain-Source Resistance	190 mOhms, 2.15 mOhms, 210 mOhms, 290 mOhms
Vds - Drain-Source Breakdown Voltage	30 V, 900 V, 600 V
Vgs - Gate-Source Voltage	20 V, 30 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Qg - Gate Charge	53 nC, 40 nC
Minimum Operating Temperature	- 55 C, - 65 C
Maximum Operating Temperature	+ 175 C, + 150 C
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Mounting Style	Through Hole
Configuration	Single
Tradename	MDmesh
Number of Channels	1 Channel
Technology	Si
Packaging	Tube

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Pd - Power Dissipation	192 W, 176.5 W, 250 W, 45 W
Height	9.15 mm
Length	10.4 mm
Series	STP20NM60, M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Fall Time	11 ns, 108 ns, 16 ns
Product Type	MOSFET
Rise Time	20 ns, 183 ns, 13.5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	42 ns, 90 ns, 64.7 ns
Typical Turn-On Delay Time	25 ns, 18 ns, 20.2 ns
Unit Weight	1.438 g, 1.800 g, 2 g
Id - Continuous Drain Current	22 A, 120 A, 20 A
Rds On - Drain-Source Resistance	190 mOhms, 2.15 mOhms, 210 mOhms, 290 mOhms
Vds - Drain-Source Breakdown Voltage	30 V, 900 V, 600 V
Vgs - Gate-Source Voltage	20 V, 30 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Qg - Gate Charge	53 nC, 40 nC
Minimum Operating Temperature	- 55 C, - 65 C
Maximum Operating Temperature	+ 175 C, + 150 C
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Mounting Style	Through Hole
Configuration	Single
Tradename	MDmesh
Number of Channels	1 Channel
Technology	Si
Packaging	Tube

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