STP24N65M2

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MOSFET N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	150 W
Channel Mode	Enhancement
Id - Continuous Drain Current	16 A
Rds On - Drain-Source Resistance	230 mOhms
Technology	Si
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	29 nC
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	650 V
Packaging	Tube
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	150 W
Channel Mode	Enhancement
Id - Continuous Drain Current	16 A
Rds On - Drain-Source Resistance	230 mOhms
Technology	Si
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	29 nC
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	650 V
Packaging	Tube
Number of Channels	1 Channel
Transistor Polarity	N-Channel