STP25N60M2-EP

MOSFETs N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 pack
Lead Time: 98 Days

SKU: STP25N60M2-EP

Availability: 491 in stock

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Quantity

100+

Price

R 91.76

R 42.81

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MOSFETs N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 pack
Lead Time: 98 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Id - Continuous Drain Current	22 A, 18 A
Rds On - Drain-Source Resistance	190 mOhms, 188 mOhms
Packaging	Tube
Series	M6
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	25 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Pd - Power Dissipation	150 W
Qg - Gate Charge	29 nC
Channel Mode	Enhancement
Mounting Style	Through Hole

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Id - Continuous Drain Current	22 A, 18 A
Rds On - Drain-Source Resistance	190 mOhms, 188 mOhms
Packaging	Tube
Series	M6
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	25 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Pd - Power Dissipation	150 W
Qg - Gate Charge	29 nC
Channel Mode	Enhancement
Mounting Style	Through Hole