MOSFET N-channel 600V, 21A FDMesh II
Products specifications
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Technology | Si |
| Pd - Power Dissipation | 160 W |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 160 mOhms |
| Id - Continuous Drain Current | 21 A |
| Channel Mode | Enhancement |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 25 V |