STP26N60DM6

MOSFETs N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
Lead Time: 98 Days

SKU: STP26N60DM6

Availability: 488 in stock

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MOSFETs N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
Lead Time: 98 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Technology	Si
Package/Case	TO-220-3
Id - Continuous Drain Current	22 A, 18 A
Rds On - Drain-Source Resistance	190 mOhms, 195 mOhms
Series	M6
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	24 nC
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3.25 V
Configuration	Single
Mounting Style	Through Hole
Pd - Power Dissipation	130 W
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Technology	Si
Package/Case	TO-220-3
Id - Continuous Drain Current	22 A, 18 A
Rds On - Drain-Source Resistance	190 mOhms, 195 mOhms
Series	M6
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	24 nC
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3.25 V
Configuration	Single
Mounting Style	Through Hole
Pd - Power Dissipation	130 W
Vds - Drain-Source Breakdown Voltage	600 V