STP27N60M2-EP

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MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220 package
Lead Time: 112 Days

SKU: STP27N60M2-EP

Availability: 1 in stock

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MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220 package
Lead Time: 112 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Id - Continuous Drain Current	22 A, 20 A
Rds On - Drain-Source Resistance	190 mOhms, 163 mOhms
Packaging	Tube
Series	M6
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Qg - Gate Charge	33 nC
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	170 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Technology	Si
Transistor Polarity	N-Channel
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Id - Continuous Drain Current	22 A, 20 A
Rds On - Drain-Source Resistance	190 mOhms, 163 mOhms
Packaging	Tube
Series	M6
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Qg - Gate Charge	33 nC
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	170 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Technology	Si
Transistor Polarity	N-Channel
Configuration	Single
Channel Mode	Enhancement