STP30N10F7

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MOSFET N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package

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MOSFET N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package

Products specifications

Vgs th - Gate-Source Threshold Voltage	4.5 V
Vds - Drain-Source Breakdown Voltage	100 V
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Tradename	STripFET
Pd - Power Dissipation	50 W
Id - Continuous Drain Current	32 A
Technology	Si
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Packaging	Tube
Qg - Gate Charge	19 nC
Rds On - Drain-Source Resistance	24 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4.5 V
Vds - Drain-Source Breakdown Voltage	100 V
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Tradename	STripFET
Pd - Power Dissipation	50 W
Id - Continuous Drain Current	32 A
Technology	Si
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Packaging	Tube
Qg - Gate Charge	19 nC
Rds On - Drain-Source Resistance	24 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C