MOSFETs N-Ch 500V 0.1 Ohm 22A MDmesh II FET
Lead Time: 0 Days
Products specifications
| Pd - Power Dissipation | 190 W |
| Qg - Gate Charge | 62.5 nC |
| Technology | Si |
| Vgs - Gate-Source Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 13.86 A |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Configuration | Single |
| Mounting Style | Through Hole |
| Tradename | MDmesh |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Rds On - Drain-Source Resistance | 130 mOhms |