MOSFETs N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package
Lead Time: 91 Days
Products specifications
| Rds On - Drain-Source Resistance | 4.8 Ohms |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 30 V |
| Pd - Power Dissipation | 25 W |
| Packaging | Tube |
| Id - Continuous Drain Current | 3 A |
| Tradename | SuperMESH |
| Technology | Si |