MOSFETs N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package
Products specifications
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 5.3 nC |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 1.9 Ohms |
| Technology | Si |
| Tradename | MDmesh |
| Configuration | Single |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Id - Continuous Drain Current | 3 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 60 W |
| Vgs - Gate-Source Voltage | 30 V |