STP5N60M2

MOSFETs N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2

SKU: STP5N60M2

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Quantity

2000+

Price

R 14.79

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MOSFETs N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Qg - Gate Charge	4.5 nC
Pd - Power Dissipation	45 W
Id - Continuous Drain Current	3.7 A
Rds On - Drain-Source Resistance	1.26 Ohms
Packaging	Tube
Technology	Si
Mounting Style	Through Hole

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Qg - Gate Charge	4.5 nC
Pd - Power Dissipation	45 W
Id - Continuous Drain Current	3.7 A
Rds On - Drain-Source Resistance	1.26 Ohms
Packaging	Tube
Technology	Si
Mounting Style	Through Hole