STP5N62K3

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MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A

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MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A

Products specifications

Vds - Drain-Source Breakdown Voltage	620 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Technology	Si
Qg - Gate Charge	26 nC
Configuration	Single
Id - Continuous Drain Current	4.2 A
Pd - Power Dissipation	70 W
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.6 Ohms
Mounting Style	Through Hole

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Products specifications

Vds - Drain-Source Breakdown Voltage	620 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Technology	Si
Qg - Gate Charge	26 nC
Configuration	Single
Id - Continuous Drain Current	4.2 A
Pd - Power Dissipation	70 W
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.6 Ohms
Mounting Style	Through Hole