MOSFETs N-Ch 60 Volt 60 Amp
Lead Time: 91 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Technology | Si |
| Vgs - Gate-Source Voltage | 10 V |
| Id - Continuous Drain Current | 60 A |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Configuration | Single |
| Qg - Gate Charge | 35 nC |
| Pd - Power Dissipation | 110 W |
| Maximum Operating Temperature | + 175 C |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Minimum Operating Temperature | - 65 C |
| Channel Mode | Enhancement |