MOSFETs N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package
Lead Time: 98 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Tradename | MDmesh |
| Configuration | Single |
| Packaging | Tube |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 4.5 A |
| Technology | Si |
| Qg - Gate Charge | 13 nC |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| Vgs - Gate-Source Voltage | 30 V |
| Pd - Power Dissipation | 85 W |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |