MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
Products specifications
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 1.05 Ohms |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 6.5 A |
| Channel Mode | Enhancement |
| Configuration | Single |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 30 V |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 18 nC |
| Packaging | Tube |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 90 W |
| Tradename | MDmesh |