STQ1HNK60R-AP

MOSFETs N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH PowerMOSFET in TO-92 package
Lead Time: 91 Days

SKU: STQ1HNK60R-AP

Availability: 7635 in stock

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MOSFETs N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH PowerMOSFET in TO-92 package
Lead Time: 91 Days

Products specifications

Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Id - Continuous Drain Current	400 mA
Rds On - Drain-Source Resistance	8.5 Ohms
Pd - Power Dissipation	30 W
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole

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Products specifications

Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Id - Continuous Drain Current	400 mA
Rds On - Drain-Source Resistance	8.5 Ohms
Pd - Power Dissipation	30 W
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole