MOSFETs P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a
Lead Time: 91 Days
Products specifications
| Packaging | Cut Tape, MouseReel, Reel |
| Rds On - Drain-Source Resistance | 30 mOhms |
| Technology | Si |
| Id - Continuous Drain Current | 6 A |
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Tradename | STripFET |
| Qg - Gate Charge | 12 nC |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Pd - Power Dissipation | 2.7 W |
| Number of Channels | 1 Channel |