MOSFET N/P-Ch 30V 8/5 Amp
Products specifications
| Number of Channels | 2 Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Id - Continuous Drain Current | 5.4 A, 8 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel, P-Channel |
| Qg - Gate Charge | 7 nC, 12.5 nC |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs - Gate-Source Voltage | 10 V |
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.6 W, 2 W |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 22 mOhms, 55 mOhms |