STU13N65M2

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MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK package

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MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK package

Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	370 mOhms
Technology	Si
Configuration	Single
Qg - Gate Charge	17 nC
Id - Continuous Drain Current	10 A
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V

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Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	370 mOhms
Technology	Si
Configuration	Single
Qg - Gate Charge	17 nC
Id - Continuous Drain Current	10 A
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V